Atomic Layer Etching: Novel Plasma Processes for Anisotropic ánd Isotropic Etching

The fabrication of nanoelectronics for future sub-5-nm technology nodes requires etching with atomiclevel accuracy, which is beyond the reach of conventional plasma etching technology. In this research project, novel plasma-based processes will be developed for layer-by-layer removal of material using atomic layer etching (ALEt). Innovative strategies will be designed for anisotropic ALEt based on the use of ions with a well-defined energy, as well as for isotropic ALEt by employing radical-driven plasmas. The insights to be obtained on anisotropic and isotropic ALEt will serve as inspiration for the development of advanced ALEt schemes, exploiting ion-radical synergistic effects or combinations with other atomic-scale processes. Together with a diverse group of users from industry and academia, this comprehensive project on ALEt will strengthen the leading position of the Netherlands in semiconductor equipment manufacturing.

  • Projectnummer / Project number: 17124
  • Deelnemende kennisinstellingen / Participating institutes: Eindhoven University of Technology (TU/e)
  • Projectleider / Project leader: Dr. ir. A. J. M. Mackus - Eindhoven University of Technology (TU/e) - research institute : Dept. Of Applied Physics, Plasma & Materials Processing
  • Type project / Type project: Lopend
  • Startdatum / Start date: 01-01-2019
  • Programma / Programme: High Tech Systemen & Materialen (HTSM)
  • Vakgebied / Discipline: Technische wetenschappen, Natuurkunde, Scheikunde


Contact

Dhr. dr. W. (Wouter) Segeth (Program Officer) Dhr. dr. W. (Wouter) Segeth (Program Officer) +31 (0)30 6001 274 w.segeth@nwo.nl